| 摘要 |
PROBLEM TO BE SOLVED: To accumulate stable saturation electrons and to make shutter voltage to be lower without complicating a layout of a circuit generating an intermediate potential pulse signal and its signal line. SOLUTION: A low concentration N-type electronic shutter time charge discharge assist region 8 is arranged at a peripheral region comprising a bottom outer circumference of a photodiode section 3, so that charges can more easily be discharged to an N-type semiconductor substrate 1 in a wider charge discharge region by making a depletion layer easily extend from the N-type semiconductor substrate 1 to a photodiode section 3-side when prescribed Vsub voltage is applied from a Vsub power supply 7 between the N-type semiconductor substrate 1 and a P-type well region 2 at an electronic shutter mode. Even if a pixel pitch is reduced, an area of a charge discharge exit region from the photodiode section 3 is not narrowed but it expands. A potential barrier tends to easily disappear and power consumption of a solid-state image sensor 20 can be reduced. COPYRIGHT: (C)2011,JPO&INPIT
|
