| 摘要 |
The present invention relates to a method of forming a SOI structure having a thin silicon layer by forming a first etch stop layer on a donor substrate, forming a second etch stop layer on the first etch stop layer, wherein the material of the second etch stop layer differs from the material of the first etch stop layer, forming a thin silicon layer on the second etch stop layer, preferably by epitaxy, and bonding the intermediate structure to a target substrate, followed by detaching the donor substrate by splitting initiated in the first etch stop layer at a weakened region and removing the remaining material of the etch stop layers to produce a final ETSOI structure. The invention also relates to the ETSOI structure produces by the described method.
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