发明名称 |
THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ORGANIC ELECTROLUMINESCENT DEVICE INCLUDING THIN FILM TRANSISTOR |
摘要 |
A thin film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode and exposed portions of the substrate; an oxide semiconductor layer formed on the gate insulating layer to correspond to the gate electrode, and comprising an HfInZnO-based oxide semiconductor, wherein the concentration of Hf is from about 9 to about 15 at % based on 100 at % of the total concentration of Hf, In, and Zn; and source and drain regions respectively formed to extend on both sides of the oxide semiconductor layer and the gate insulating layer.
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申请公布号 |
US2011140096(A1) |
申请公布日期 |
2011.06.16 |
申请号 |
US20100873206 |
申请日期 |
2010.08.31 |
申请人 |
C/O SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
KIM KWANG-SUK;PARK JIN-SEONG |
分类号 |
H01L29/22;H01L21/336 |
主分类号 |
H01L29/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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