Methods of filling deep trenches in substrates are described. A method includes providing a substrate with a deep trench formed therein. The method also includes forming a dielectric layer conformal with the substrate and the deep trench. The method also includes, with the entire portion of the dielectric layer conformal with the deep trench exposed, removing at least a portion, but not all, of the dielectric layer at the top of the deep trench with a relatively low bias plasma etch process.
申请公布号
WO2011041140(A3)
申请公布日期
2011.06.16
申请号
WO2010US49354
申请日期
2010.09.17
申请人
APPLIED MATERIALS, INC.;RAORANE, DIGVIJAY;SIRAJUDDIN, KHALLD, M.;FARR, JON, C.;PAMARTHY, SHARMA, V.
发明人
RAORANE, DIGVIJAY;SIRAJUDDIN, KHALLD, M.;FARR, JON, C.;PAMARTHY, SHARMA, V.