发明名称 Device for continuously movable infiltration of a flexible band substrate in high vacuum without touching the front side of the band substrate, comprises a sequence of prechambers to which the band substrate passes through
摘要 <p>The device for continuously movable infiltration of a flexible band substrate in high vacuum without touching the front side of the band substrate, comprises a sequence of prechambers to which the band substrate passes through, where the pressure is gradually reduced in the prechambers, which are connected by openings or connection channels (4) whose minimum width and height are higher than the respective band substrate dimensions. The band substrate is guided by the prechamber over deflection rollers (2) so that the infiltration is carried out in non-straight manner. The device for continuously movable infiltration of a flexible band substrate in high vacuum without touching the front side of the band substrate, comprises a sequence of prechambers to which the band substrate passes through, where the pressure is gradually reduced in the prechambers, which are connected by openings or connection channels (4) whose minimum width and height are higher than the respective band substrate dimensions. The band substrate is guided by the prechamber over deflection rollers (2) so that the infiltration is carried out in non-straight manner so that the inlet- and outlet direction of the band include an angle. The inlet opening in the infiltration consists of a thin opening. The thickness of the inlet opening (3) is smaller than 1 mm. The connection between the first and the second pre-chambers consists of a thin panel or a short channel, which provides a pressure balance to the second prechamber on the band back side. The distance between the middle point of the deflection rollers and the band inlet into the respective adjacent connection channels is one upto two radii of the respective deflection rollers. The wrap angle of the deflection rollers is 10[deg] . The angle between the inlet- and the outlet direction of the infiltration is 90[deg] . The infiltration in the high vacuum consists of three to five levels. The bandwidth is maximum 100 mm and the band thickness is maximum 0.2 mm. The minimum height of the openings and connection channels corresponds to double band thickness. The height of the openings and connection channels of maximum 0.5 mm is larger than double band thickness. The length of the connection channels is below an input pressure in the channel of 1 mbar to 20 mm. A seal gas is embedded after the n-th level and the seal gas pressure lies over the gas pressure in the n-ten prechambers into the area of the seal gas inflow so that it comes to a countercurrent, which prevents the influx of atmospheric gas. The prechamber and the channel of the infiltration are embedded into a mounting plate, which is covered by a removable cover.</p>
申请公布号 DE102009052873(A1) 申请公布日期 2011.06.16
申请号 DE20091052873 申请日期 2009.11.13
申请人 THEVA DUENNSCHICHTTECHNIK GMBH 发明人 SIGL, GEORG;PRUSSEIT, WERNER
分类号 C23C14/56;C23C16/54 主分类号 C23C14/56
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