| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a fine rod type light emitting device that has a high flexibility of mounting to equipment and high efficiency of light extraction. <P>SOLUTION: A method of manufacturing the rod type light emitting device includes a step of forming a growth mask 12 having a growth hole 12a on a sapphire substrate 11, a step of forming a rod-like semiconductor core composed of n-type GaN on the exposed region of the sapphire substrate 11 exposed by the growth hole 12a of the growth mask 12, a semiconductor layer forming step of forming a semiconductor layer composed of p-type GaN so as to cover a coating part of the semiconductor core, a growth-mask removing step of removing the growth mask 12 by etching so as to expose the exposed part of the semiconductor core after the semiconductor layer forming step, and a separating step of separating the semiconductor core including the exposed part and the coating part from the sapphire substrate 11 after the growth-mask removing step. A narrowed part 10 is formed on the inner-peripheral side of the growth hole 12a of the growth mask 12 and on the side of the sapphire substrate 11 so that the inner diameter is reduced toward the side of the sapphire substrate 11. <P>COPYRIGHT: (C)2011,JPO&INPIT |
