| 发明名称 |
LATERAL POWER MOSFET STRUCTURE AND METHOD OF MANUFACTURE |
| 摘要 |
A lateral power MOSFET with a low specific on-resistance is described. Stacked P-top and N-grade regions in patterns of articulated circular arcs separate the source and drain of the transistor.
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| 申请公布号 |
US2011140201(A1) |
申请公布日期 |
2011.06.16 |
| 申请号 |
US20100775440 |
申请日期 |
2010.05.06 |
| 申请人 |
LIN CHENG-CHI;LIN CHEN-YUAN;LIEN SHIH-CHIN;WU SHYI-YUAN |
发明人 |
LIN CHENG-CHI;LIN CHEN-YUAN;LIEN SHIH-CHIN;WU SHYI-YUAN |
| 分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
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