Method for forming metal materials comprising semi-conductors

摘要

The method involves providing a substrate having areas made of semi-conductor materials having silicon and germanium, respectively. The areas are separated by a pattern made from dielectric material. A metal layer is deposited on the substrate. The heat treatment e.g. lamp-based rapid thermal annealing, in atmosphere comprising quantity of oxygen comprised between 0.01 and 5 percentages, is performed, so that the metal layer reacts partially with the semi-conductor materials to respectively form one metal-based material containing silicon and another metal-based material containing germanium.