| 摘要 |
<p>PURPOSE: A thin film transistor substrate and manufacturing method thereof are provided to form a column spacer and a dummy column spacer together, thereby preventing defects due to static electricity. CONSTITUTION: A thin film transistor is formed on an insulating substrate(10). The thin film transistor includes a gate electrode, a semiconductor layer(40), a source electrode(65), and a drain electrode(66). A dummy pattern includes an opening which exposes the insulating substrate. A dummy column spacer(91) buries the opening. The dumpy column spacer is made of organic insulating materials.</p> |
