| 摘要 |
PURPOSE: An image sensor and manufacturing method thereof are provided to use a transparent conductive material which includes graphene, thereby lowering the stack height of the image sensor. CONSTITUTION: A unit pixel comprises a light sensing part(130) and a readout circuit formed on the frontal surface of a semiconductor substrate(100). Wires(M1,M2) and an interlayer insulating layer(150) are formed on the frontal surface of the semiconductor substrate. A lens type transparent electrode(200) is formed on the rear side of the semiconductor substrate to correspond to the unit pixel. The lens type transparent electrode includes graphene. A color filter(170) is arranged under the lens type transparent electrode.
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