SPEICHERZELLE ZUR VERWENDUNG IN EINER INTEGRIERTEN SCHALTUNG

摘要

A memory cell, comprising:
a first layer (202) of conductive material;
a dielectric layer (204) formed on a surface of the first layer;
an opening (206) formed in the dielectric layer to expose a portion of the surface of the first layer;
a binding layer (210') formed on the dielectric layer and on the exposed portion of the surface of the first layer;
a second layer (212) of conductive material formed on the binding layer;
a layer (214) of doped chalcogenide material formed on the second layer of conductive material; and
a third layer (216') of conductive material formed on the layer of doped chalcogenide material.