| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor having excellent capacitor characteristics. SOLUTION: This method of forming a ferroelectric capacitor includes the processes of: (a) forming a first conductive layer 20a on a substrate 10; (b) forming a ferroelectric layer 30a containing a ferroelectric substance having oxygen on the first conductive layer 20a; (c) forming a second conductive layer 40a on the ferroelectric layer 30a; (d) forming a mask M1 on the second conductive layer 40a; (e) etching at least the second conductive layer 40a using the mask M1 and thereby forming a capacitor composed of the first conductive layer 20, ferroelectric layer 30, and second conductive layer 40; (f) attaching fluorine to the exposed surface of the ferroelectric layer 30 exposed by etching after the process (e); and (g) heat-treating the capacitor. COPYRIGHT: (C)2011,JPO&INPIT
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