发明名称 FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To attain high mobility and a high on/off ratio, in a field effect transistor with a semiconductor layer containing a CNT on a substrate formed of an organic polymer compound. SOLUTION: The field effect transistor includes a substrate formed of the organic polymer compound, a gate electrode, a gate insulating layer, the semiconductor layer, and a source electrode, and a drain electrode where the semiconductor layer contains a carbon nanotube composite having a conjugate polymer stuck on at least a part of the surface thereof. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011119435(A) 申请公布日期 2011.06.16
申请号 JP20090275267 申请日期 2009.12.03
申请人 TORAY IND INC 发明人 MURASE SEIICHIRO;IKEDA MAIKO;TSUKAMOTO JUN
分类号 H01L29/786;H01L51/05;H01L51/30;H01L51/40 主分类号 H01L29/786
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