| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, capable of relieving a thermal stress generating in an isolated trench portion. SOLUTION: A step of forming an oxide film 30 on a surface of an SOI layer 20 is included. A step of forming a nitride film 40 on a surface of the oxide film 30 is included. A step of removing the SOI layer 20, the oxide film 30, and the nitride film 40 inside an isolated trench region R2 to form a first trench 52 is included. A step of thermally oxidizing the SOI layer 20 exposed to a sidewall of the first trench 52 to form the isolated trench region R2 charged internally with a thermal oxide film 60 is included. A step of removing the nitride film 40 is included. A step of forming an amorphous silicon layer 70 is included. A step of removing the thermal oxide film 60 and the amorphous silicon layer 70 in the isolated trench region R2 to form a second trench 82 is included. A step of degenerating the amorphous silicon layer 70 to a thermal oxide film 71 by thermal oxidation to block an opening 72 is included. COPYRIGHT: (C)2011,JPO&INPIT
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