发明名称 |
PROCESS FOR PRODUCING GRAPHENE/SiC COMPOSITE MATERIAL AND GRAPHENE/SiC COMPOSITE MATERIAL OBTAINED THEREBY |
摘要 |
A process for advantageously producing a graphene/SiC composite material is provided in which a large-area graphene layer that is flat in an atomic level is formed on a SiC single crystal substrate. The process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of: removing an oxide film that is formed by natural oxidation and covers a surface of the SiC single crystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed.
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申请公布号 |
US2011143093(A1) |
申请公布日期 |
2011.06.16 |
申请号 |
US201113032884 |
申请日期 |
2011.02.23 |
申请人 |
NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY |
发明人 |
KUSUNOKI MICHIKO;NORIMATSU WATARU |
分类号 |
B32B3/00;B32B5/00;B32B9/04;B82Y30/00;B82Y40/00 |
主分类号 |
B32B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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