| 发明名称 |
MULTI-PORT MEMORY BASED ON DRAM CORE |
| 摘要 |
A semiconductor memory device includes a plurality of N external ports, each of which receives commands, and an internal circuit which performs at least N access operations during a minimum interval of the commands that are input into one of the external ports.
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| 申请公布号 |
US2011141795(A1) |
申请公布日期 |
2011.06.16 |
| 申请号 |
US201113031080 |
申请日期 |
2011.02.18 |
| 申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
MATSUZAKI YASUROU;SUZUKI TAKAAKI;YAMAZAKI MASAFUMI;KAWASAKI KENICHI;KAMATA SHINNOSUKE;SATO AYAKO;MATSUMIYA MASATO |
| 分类号 |
G11C11/24;G11C7/22;G11C8/16;G11C8/18;G11C11/406;G11C11/409 |
主分类号 |
G11C11/24 |
| 代理机构 |
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