| 摘要 |
878,765. Semi-conductors. PLESSEY CO. Ltd. Nov. 5, 1957 [Nov. 5, 1956], No. 33758/56. Class 37. Doped semi-conductor material is prepared by supplying a gaseous hydride of the semiconductor element together with a desired proportion of a gaseous hydride of the impurity element, to a decomposition chamber for simultaneous decomposition. The Figure shows an example in which a controlled flow of monosilane is applied to a decomposition chamber 4 with either a controlled amount of borane if P-type silicon is desired, or of phosphine if N-type is desired. Excess hydrides and hydrogen are removed by exhaust means 12 and the doped silicon is obtained at 13. The desired proportion of impurity may be obtained by control of the partial pressures. Specifications 878,763 and 878,764 are referred to. Reference has been directed by the Comptroller to Specification 778,383. |
