CARBON NANOTUBE TRANSISTOR ARRAY AND MANUFACTURING METHOD OF CARBON NANOTUBE TRANSISTOR

摘要

PURPOSE: A carbon nanotube transistor array and method for manufacturing a carbon nanotube transistor are provided to control the doping type of a carbon nanotube channel by performing a simple thin film deposition process without a separate doping process. CONSTITUTION: A source(11), a drain(12), and a carbon nanotube channel(13) are formed on a substrate(10). A gate insulating layer(14) is formed on the carbon nanotube channel by an ALD(Atomic Layer Deposition) process which controls a temperature range. An ALD process temperature is 150°C. The carbon nanotube channel has a p type property. The gate insulating layer is made of AI2O3.