VERFAHREN ZUR HERSTELLUNG EINER VERTIKALEN MOS- TRANSISTORANORDNUNG

摘要

Production of a body area (9) of first conductivity type comprises implanting a doping material of first conductivity type into a semiconductor body followed by implanting a doping material of second conductivity type having a lower dose than the first implantation step, and then diffusion of the doping material. Production of a body area (9) of first conductivity type comprises implanting a doping material of first conductivity type into a semiconductor body followed by implanting a doping material of second conductivity type having a lower dose than the first implantation step. The body area has at least one channel region (11) arranged between a source region (10) and a drain region (2, 3) of second conductivity and bordering a gate electrode (5). The body area and the source region extend from a first surface (14) into the semiconductor body, and the drain region extends from a second surface (15) into the semiconductor body. The dosage of the first implantation is 10-1000 times larger than that of the second implantation.