| 摘要 |
PURPOSE: The sealing of an image sensor and a method for manufacturing the sealing of the image sensor are provided to increase the high temperature resistance of the sealing by forming the sealing in a multiple partition structure and a supporting wall structure. CONSTITUTION: A plurality of element isolation films(112) is formed at the semiconductor substrate(110) in the peripheral side of the chip region of an image sensor and defines a sealing region. An insulating film(120) is formed on the semiconductor substrate in the sealing region and is formed into a multiple stacked structure. A plurality of contact plugs(122, 132, 142) or vias are formed on the insulating film to surround the chip region and are formed into partition structures.
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