| 摘要 |
PURPOSE: A method for forming a salicide film of a semiconductor device is provided to reduce the resistance of a salicide film without respect to a design rule using desilicide. CONSTITUTION: A cobalt salicide film(110) is formed on a gate electrode formed on a semiconductor substrate(100). A spacer(113) is formed on a sidewall of the gate electrode. A hard mask is patterned on the gate electrode. A titanium salicide film(140) is formed on source/drain areas using the hard mask. The cobalt salicide film is processed by heat which is in the range of 450 to 500°C.
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