发明名称 |
METHODS AND COMPOSITIONS FOR POLISHING SILICON-CONTAINING SUBSTRATES |
摘要 |
The invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing a silicon-containing substrate. A method of the invention comprises the steps of contacting a silicon-containing substrate with a polishing pad and an aqueous CMP composition, and causing relative motion between the polishing pad and the substrate while maintaining a portion of the CMP composition in contact with the surface of the substrate to abrade at least a portion of the substrate. The CMP composition comprises a ceria abrasive, a polishing additive bearing a functional group with a pKa of about 4 to about 9, a nonionic surfactant with an hydrophilic portion and a lipophilic portion wherein the hydrophilic portion has a number average molecular weight of about 500 g/mol or higher, and an aqueous carrier, wherein the pH of the composition is 7 or less. The method reduces defects on the wafers, particularly local areas of high removal. The method is also useful for polishing dielectric silicon-containing substrates at a high rate relative to semiconductor silicon-containing substrates. |
申请公布号 |
EP2331649(A2) |
申请公布日期 |
2011.06.15 |
申请号 |
EP20090803244 |
申请日期 |
2009.07.23 |
申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
DE REGE THESAURO, FRANCESCO;CHEN, ZHAN |
分类号 |
C09K3/14;B24B37/04;C09G1/02;H01L21/321 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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