METHOD FOR LIMITING EPITAXIAL GROWTH IN A PHOTOELECTRIC DEVICE WITH HETEROJUNCTIONS, AND PHOTOELECTRIC DEVICE

摘要

The method involves texturing a surface of a crystalline silicon substrate by an anisotropic etching, and forming pyramids on the crystalline silicon substrate, where the pyramids have a base whose dimension is greater than 5 micrometer. The surface of the crystalline silicon substrate is covered by the pyramids. A trough is formed on the crystalline silicon substrate, where the trough has a round base including a curvature radius that is higher than 0.005 micrometer. An independent claim is also included for a photoelectric device comprising an amorphous silicon layer.