| 摘要 |
PURPOSE: A light emitting device is provided to divide a P type electrode with a relatively high resistance into two, thereby effectively emitting heat. CONSTITUTION: A buffer layer is formed on a substrate. An N type semiconductor layer is formed on the buffer layer. A first light emitting unit(100) includes a first activation layer, a first P type semiconductor layer, and a first P type electrode(140). A second light emitting unit(200) includes a second activation layer, a second P type semiconductor layer, and a second P type electrode(240). An N type electrode(30) is formed on the third region of the N type semiconductor layer.
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