TRANSISTOR AND ELECTRONIC DEVICE COMPRISING THE TRANSISTOR
摘要
PURPOSE: A transistor and electronic device with the same are provided to prevent the degradation of a channel layer due to an external environment, thereby obtaining superior reliability. CONSTITUTION: A channel layer(C1) includes a Zn oxide. A source and a drain(D1) contact both ends of the channel layer respectively. A gate insulating layer insulates the channel layer from a gate. The channel layer includes a first side adjacent to a substrate and a second side facing the first side. A channel layer-protection area includes a fluoride group material on the second side.
申请公布号
KR20110064701(A)
申请公布日期
2011.06.15
申请号
KR20090121407
申请日期
2009.12.08
申请人
SNU R&DB FOUNDATION;SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, JAE CHEOL;LEE, CHANG SEUNG;OH, SE JUNG;BENAYAD ANASS;CHUNG, JAE GWAN;LEE, EUN HA;KIM, SANG WOOK