| 摘要 |
PURPOSE: A method for forming an image sensor is provided to form a TiN film on the bottom of a metal wire at a relatively high temperature and with low pressure, thereby improving image features. CONSTITUTION: A first interlayer insulating film(102) and a first diffusion preventing layer(103) are formed on a semiconductor substrate. Parts of the first interlayer insulating film and the first diffusion preventing layer are selectively eliminated and the parts are filled with conductive materials to form a first contact plug(105). A single layered thin film layer(106) and a first metal wire(107) are formed on the top of the first diffusion preventing layer in which a first contact plug is formed. The single layered thin film layer is a TiN film with relatively low Rs. The TiN film is formed in the range of 340 to 350°C.
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