发明名称 |
Manufacturing method of semiconductor device |
摘要 |
After a first via hole leading to a ferroelectric capacitor structure are formed in an interlayer insulating film by dry etching, a second via hole to expose part of the ferroelectric capacitor structure is formed in a hydrogen diffusion preventing film so as to be aligned with the first via hole by wet etching, and a via hole constructed by the first via hole and the second via hole communicating with each other is formed.
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申请公布号 |
US7960227(B2) |
申请公布日期 |
2011.06.14 |
申请号 |
US20090543179 |
申请日期 |
2009.08.18 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
HAYASHI YASUHIRO;IZUMI KAZUTOSHI |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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