发明名称 Charge pump and charging/discharging method capable of reducing leakage current
摘要 A charge pump includes a first transistor, a second transistor, a first, a second and a third selectors. The first transistor includes a gate electrode, a first electrode, and a second electrode which serves as an output port of the charge pump. The second transistor includes a gate electrode, a first electrode and a second electrode, where the gate electrode of the first transistor is coupled to the gate electrode of the second transistor, and the gate electrode of the second transistor is coupled to the second electrode of the second transistor. The first selector is utilized for selectively connecting the first transistor to a first supply voltage. The second selector is utilized for selectively connecting the first transistor to a second supply voltage. The third selector is utilized for selectively connecting the second transistor to the second supply voltage.
申请公布号 US7961016(B2) 申请公布日期 2011.06.14
申请号 US20090500568 申请日期 2009.07.09
申请人 NANYA TECHNOLOGY CORP. 发明人 CHENG WEN-CHANG
分类号 H03L7/06 主分类号 H03L7/06
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