发明名称 |
Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions |
摘要 |
An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized boron hydride molecular clusters are implanted to form P-type transistor structures. For example, in the fabrication of Complementary Metal-Oxide Semiconductor (CMOS) devices, the clusters are implanted to provide P-type doping for Source and Drain structures and for Polygates; these doping steps are critical to the formation of PMOS transistors. The molecular cluster ions have the chemical form BnHx+ and BnHx− where 10<n<100 and 0<x<n+4.
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申请公布号 |
US7960709(B2) |
申请公布日期 |
2011.06.14 |
申请号 |
US20050519699 |
申请日期 |
2005.09.14 |
申请人 |
SEMEQUIP, INC. |
发明人 |
HORSKY THOMAS N.;JACOBSON DALE C. |
分类号 |
A61N5/00;H01J27/20;H01J37/08;H01J37/317;H01L21/00;H01L21/265;H01L21/336 |
主分类号 |
A61N5/00 |
代理机构 |
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地址 |
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