发明名称 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR
摘要 <p>Provided is a metallic wiring film which is not peeled away even when exposed to a hydrogen plasma. A metallic wiring film is constituted by an adhesion layer containing copper, Ca, and oxygen and a low-resistance metal layer (a layer of a copper alloy or pure copper) having a lower resistance than the adhesion layer. When the adhesion layer is composed of a copper alloy, which contains Ca and oxygen, and a source electrode film and a drain electrode film adhering to an ohmic contact layer are constituted by the adhesion layer, even if the adhesion layer is exposed to the hydrogen plasma, a Cu-containing oxide formed at an interface between the adhesion layer and the ohmic contact layer is not reduced, so that no peeling occurs between the adhesion layer and a silicon layer.</p>
申请公布号 KR20110063835(A) 申请公布日期 2011.06.14
申请号 KR20117008923 申请日期 2009.10.20
申请人 MITSUBISHI MATERIALS CORP.;ULVAC, INC. 发明人 TAKASAWA SATORU;ISHIBASHI SATORU;MASUDA TADASHI
分类号 H01L29/786;H01L21/28;H01L21/336 主分类号 H01L29/786
代理机构 代理人
主权项
地址