发明名称 |
Nonvolatile memory device and programming method |
摘要 |
Disclosed is a programming method for a nonvolatile memory device. The method includes; charging word-line signal lines to a pass voltage during a pass voltage charge operation, simultaneously executing an initial precharge operation for strings including program-inhibited cells during the pass voltage charge operation, and applying the pass voltage to word lines from the word-line signal lines in response to a block-selection enabling signal.
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申请公布号 |
US7961523(B2) |
申请公布日期 |
2011.06.14 |
申请号 |
US20090430971 |
申请日期 |
2009.04.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG-HOON;KIM BO-GEUN |
分类号 |
G11C11/34;G11C7/00;G11C16/04;G11C16/06 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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