| 摘要 |
To provide a copolymer for semiconductor lithography employed for forming a resist film as well as thin films such as an anti-reflection film, a gap-filling film, a top coating film, etc. which are formed on or under a resist film, these films being employed in semiconductor lithography, wherein the copolymer has excellent solubility in a solution of a thin film-forming composition and prevents generation of microparticles (e.g., microgel) and pattern defects, and to provide a method for producing the copolymer reliably on an industrial scale. The invention is directed to a copolymer for semiconductor lithography having at least one repeating unit selected from among (A) a repeating unit having a hydroxyl group; (B) a repeating unit having a structure in which a hydroxyl group is protected by a group which inhibits dissolution in an alkaline developer and which dissociates by the action of an acid; (C) a repeating unit having a lactone structure; and (D) a repeating unit having a cyclic ether structure, wherein, when a solution of the copolymer in propylene glycol monomethyl ether acetate having a viscosity of 15 mPa·sec is caused to pass through a filter having a pore size of 0.03 μm under a pressure difference of 0.1 MPa for 60 minutes, the solution exhibits an average flow rate per unit filter area of 200 g/min/m2 or more, and to a method for producing the copolymer.
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