发明名称 |
Structure and method for creating reliable via contacts for interconnect applications |
摘要 |
A reliable and mechanical strong interconnect structure is provided that does not include gouging features in the bottom of the an opening, particularly at a via bottom. Instead, the interconnect structures of the present invention utilize a Co-containing buffer layer that is selectively deposited on exposed surfaces of the conductive features that are located in a lower interconnect level. The selective deposition is performed through at least one opening that is present in a dielectric material of an upper interconnect level. The selective deposition is performed by electroplating or electroless plating. The Co-containing buffer layer comprises Co and at least one of P and B. W may optionally be also present in the Co-containing buffer layer.
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申请公布号 |
US7960274(B2) |
申请公布日期 |
2011.06.14 |
申请号 |
US20090538772 |
申请日期 |
2009.08.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG CHIH-CHAO;VAN DER STRATEN OSCAR |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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