FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE AND LIQUID DISCHARGE DEVICE

摘要

When a film containing constituent elements of a target is formed on a substrate through a vapor deposition technique using plasma with placing the substrate and the target to face each other, film formation is carried out with controlling variation of plasma potential Vs (V) in a plasma space in an in-plane direction of the substrate to be within ±10V at a distance of 2-3 cm from a surface of the target toward the substrate.