发明名称 Adjustment of masks by re-flow
摘要 As a step in performing a process on a structure, a hole pattern is provided in a thin layer of organic resin masking material formed over the structure to provide a process mask. A processing step is then performed through the openings in the mask, and after a processing step is completed the mask is adjusted by a re-flow process in which the structure is placed into an atmosphere of solvent vapor of a solvent of the mask material. By way of the re-flow process, the mask material softens and re-flows to reduce the size of the openings in the mask causing edges of the surface areas on which the processing step was performed to be covered by the mask for subsequent processing steps.
申请公布号 US7960206(B2) 申请公布日期 2011.06.14
申请号 US20090551329 申请日期 2009.08.31
申请人 CSG SOLAR AG 发明人 YOUNG TREVOR LINDSAY;EVANS RHETT
分类号 H01L21/00;H01L21/027;H01L21/033;H01L21/3105;H01L21/311;H01L21/3213;H01L21/4763;H01L27/142;H01L31/18 主分类号 H01L21/00
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