发明名称 Method of operating semiconductor device
摘要 Provided is a method of operating a semiconductor device, in which a gate voltage or a drain voltage is adjusted in order to add carriers to or remove carriers from a body region, thereby realizing semiconductor having a plurality of data states.
申请公布号 US7961539(B2) 申请公布日期 2011.06.14
申请号 US20090591202 申请日期 2009.11.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI SANG-MOO;KIM WON-JOO;LEE TAE-HEE
分类号 G11C13/00 主分类号 G11C13/00
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