发明名称 Repairable block redundancy scheme
摘要 A scheme for block substitution within a flash memory device is disclosed which uses a programmable look-up table to store new addresses for block selection when certain input block addresses are received. The new addresses are loaded into a programmable fuse latch each time an address transition is detected in the input address. The new addresses may contain block addresses or block and bank addresses.
申请公布号 US7962784(B2) 申请公布日期 2011.06.14
申请号 US20090427461 申请日期 2009.04.21
申请人 MICRON TECHNOLOGY, INC. 发明人 LAKHANI VINOD;LOUIE BENJAMIN
分类号 G06F11/00;G11C29/00;H04L1/22 主分类号 G06F11/00
代理机构 代理人
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