发明名称 |
Narrow channel width effect modification in a shallow trench isolation device |
摘要 |
A method of manufacturing a semiconductor structure is provided. The method includes forming a hard mask pattern on a semiconductor substrate, wherein the hard mask pattern covers active regions; forming a trench in the semiconductor substrate within an opening defined by the hard mask pattern; filling the trench with a dielectric material, resulting in a trench isolation feature; performing an ion implantation to the trench isolation feature using the hard mask pattern to protect active regions of the semiconductor substrate; and removing the hard mask pattern after the performing of the ion implantation.
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申请公布号 |
US7960286(B2) |
申请公布日期 |
2011.06.14 |
申请号 |
US20090486515 |
申请日期 |
2009.06.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIAO MING-HAN;LEE TZE-LIANG |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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