发明名称 |
Thin film transistor substrate and method of manufacturing the same and mask for manufacturing thin film transistor substrate |
摘要 |
A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light. |
申请公布号 |
US7960221(B2) |
申请公布日期 |
2011.06.14 |
申请号 |
US20100755920 |
申请日期 |
2010.04.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM DO GI;LEE JONG HWAN;LEE HONG WOO;KIM YONG JO;LEE YONG WOO |
分类号 |
H01L21/00;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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