| 摘要 |
Some embodiments include apparatus and methods having a memory element configured to store information and an access component configured to allow conduction of current through the memory element when a first voltage difference in a first direction across the memory element and the access component exceeds a first voltage value and to prevent conduction of current through the memory element when a second voltage difference in a second direction across the memory element and the access component exceeds a second voltage value, wherein the access component includes a material excluding silicon.
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