发明名称 Memory power management systems and methods
摘要 Memory power management systems and methods are provided. One embodiment of the present invention includes a memory power management system. The system comprises a first low dropout (LDO) regulator that provides an active operating voltage that is derived from a first supply voltage to power a memory array during an active mode. The system further comprises a second LDO regulator that provides a minimum memory retention voltage that is derived from a second supply voltage to power the memory array in a standby mode, wherein the second supply voltage also powers at least one peripheral circuit for reading from and/or writing to the memory array.
申请公布号 US7961546(B2) 申请公布日期 2011.06.14
申请号 US20080258747 申请日期 2008.10.27
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 MAIR HUGH T.;PITTS ROBERT L.;WANG ALICE;GURURJARAO SUMANTH K.;VILANGUDIPITCHAI RAMAPRASATH;GAMMIE GORDON;KO UMING
分类号 G11C5/14 主分类号 G11C5/14
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