发明名称 Thin-film transistor substrate and method of fabricating the same
摘要 A thin-film transistor (“TFT”) substrate includes an insulating substrate, a gate line and a data line which are insulated from each other, disposed on the insulating substrate and are arranged in a lattice, and a pixel electrode which is electrically connected to the gate line and the data line by a switching device. The data line includes a lower layer which is formed of a transparent electrode, and an upper layer which is disposed directly on the lower layer.
申请公布号 US7960219(B2) 申请公布日期 2011.06.14
申请号 US20090575570 申请日期 2009.10.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM WOONG-KWON;KIM IN-WOO;JEONG KI-HUN
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址