发明名称 |
Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method |
摘要 |
In one embodiment, a semiconductor device is formed having vertical localized charge-compensated trenches, trench control regions, and sub-surface doped layers. The vertical localized charge-compensated trenches include at least a pair of opposite conductivity type semiconductor layers. The trench control regions are configured to provide a generally vertical channel region electrically coupling source regions to the sub-surface doped layers. The sub-surface doped layers are further configured to electrically connect the drain-end of the channel to the vertical localized charge compensation trenches. Body regions are configured to isolate the sub-surface doped layers from the surface of the device.
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申请公布号 |
US7960781(B2) |
申请公布日期 |
2011.06.14 |
申请号 |
US20080206516 |
申请日期 |
2008.09.08 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
LOECHELT GARY H.;ZDEBEL PETER J. |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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