Field effect transistor and method of producing the same

摘要

An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I1 in a Bragg angle (2&thetas;) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I2 in a Bragg angle (2&thetas;) range of 23.0° to 26.0° in X-ray diffraction using CuKα radiation.