发明名称 |
Conductor-dielectric structure and method for fabricating |
摘要 |
A conductor-dielectric interconnect structure is fabricated by providing a structure comprising a dielectric layer having a patterned feature therein; depositing a plating seed layer on the dielectric layer in the patterned feature; depositing a sacrificial seed layer on the plating seed layer in the via; reducing the thickness of the sacrificial seed layer by reverse plating; and plating a conductive metal on the sacrificial seed layer in the patterned feature. Also provided is a dielectric layer having a via therein; a plating seed layer on the dielectric layer in the patterned feature; and a discontinuous sacrificial seed layer located in the patterned feature.
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申请公布号 |
US7960276(B2) |
申请公布日期 |
2011.06.14 |
申请号 |
US20080128713 |
申请日期 |
2008.05.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PONOTH SHOM;RATH DAVID L.;YANG CHIH-CHAO;WONG KEITH KWONG HON |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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