发明名称 |
METHOD AND APPARATUS FOR SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATES USING SEQUENTIAL CHEMICAL APPLICATIONS |
摘要 |
Systems for removing post etch polymer residue from etched surface includes a first proximity head to introduce a first cleaning chemistry as a first meniscus to a portion of the surface of the substrate so as to cover a length that extends to at least a diameter of the substrate and a first width that is less than the diameter of the substrate. A second proximity head is configured to introduce a second cleaning chemistry as a second meniscus to the portion so as to cover the length that extends to the diameter and a second width that is less than the diameter of the substrate. A substrate supporting device equipped with a motor coupled to a computing system is used to move the substrate supporting device under the first proximity head at a first linear speed and under the second proximity head at a second linear speed. |
申请公布号 |
KR20110063832(A) |
申请公布日期 |
2011.06.14 |
申请号 |
KR20117008695 |
申请日期 |
2009.07.13 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
MIKHAYLICHENKO KATRINA;SABBA YIZHAK;PODLESNIK DRAGAN |
分类号 |
H01L21/302;H01L21/336 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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