发明名称 METHOD AND APPARATUS FOR SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATES USING SEQUENTIAL CHEMICAL APPLICATIONS
摘要 Systems for removing post etch polymer residue from etched surface includes a first proximity head to introduce a first cleaning chemistry as a first meniscus to a portion of the surface of the substrate so as to cover a length that extends to at least a diameter of the substrate and a first width that is less than the diameter of the substrate. A second proximity head is configured to introduce a second cleaning chemistry as a second meniscus to the portion so as to cover the length that extends to the diameter and a second width that is less than the diameter of the substrate. A substrate supporting device equipped with a motor coupled to a computing system is used to move the substrate supporting device under the first proximity head at a first linear speed and under the second proximity head at a second linear speed.
申请公布号 KR20110063832(A) 申请公布日期 2011.06.14
申请号 KR20117008695 申请日期 2009.07.13
申请人 LAM RESEARCH CORPORATION 发明人 MIKHAYLICHENKO KATRINA;SABBA YIZHAK;PODLESNIK DRAGAN
分类号 H01L21/302;H01L21/336 主分类号 H01L21/302
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