ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: An array panel and manufacturing method thereof are provided to prevent the degradation of the thin film transistor property without exposing an active layer to an etching process. CONSTITUTION: A gate electrode(107) is formed in an impurity poly-silicon into the island type in the switching domain of the top of the substrate. A gate insulating layer is formed in the gate electrode while having the same flat type as the gate electrode. An active layer of a poly-silicon exposes the edge part of the gate insulating layer. An inter-layer insulating is formed in a second active contact hole.