LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A light emitting device, light emitting device package, and manufacturing method thereof are provided to form an electron barrier layer between an active layer and a second conductive semiconductor layer, thereby increasing internal quantum efficiency. CONSTITUTION: An undoped nitride layer is formed in the top of the substrate. A first conductive semiconductor layer(30) is formed on the undoped nitride layer. An active layer is formed on the first conductive semiconductor layer. An electron barrier layer(50) is formed on the active layer. A second conductive semiconductor layer(60) is formed on the electron barrier layer. A first electrode layer is formed on the first conductive semiconductor layer. A second electrode layer is formed on the second conductive semiconductor layer.