| 摘要 |
<p>PURPOSE: A method for cleaning a photomask is provided to improve yield of masks with no defects by suppressing defects generated in an etching process in advance. CONSTITUTION: A method for cleaning a photomask comprises the steps of: forming a phase shift layer(105) and a light shield layer on a light transmissive substrate; forming resist layer patterns(120) on the light shield layer; forming light shield layer patterns(125) through an etching process; irradiating UV to a polymer layer(135) and defect factors(130) attached to the surface of the phase shift layer; supplying a basic cleaning solution and removing the polymer layer and defect factors; and etching an exposed region of the phase shift layer to form the phase shift layer patterns.</p> |
