| 摘要 |
<p>PURPOSE: A method for manufacturing an oxide thin film transistor is provided to secure the superior uniformity using an amorphous oxide semiconductor as an active layer. CONSTITUTION: Source/drain electrodes(122, 123) are formed on a substrate(110) based on a transparent insulating material. A first conductive film is formed using at least one of opaque conductive materials including aluminum, aluminum alloy, tungsten, copper, nickel, chrome, molybdenum, titanium, platinum, and tantalum. An active layer is in electric connection with the source/drain electrodes. A gate insulating film is formed on the active layer. The gate electrode is formed on the gate insulating film. The gate electrode is in connection with a pre-set gate line. A part of the source electrode is in connection with a data line.</p> |
